碳化矽基板, SiC wafer, Silicon Carbide Substrate
石墨烯磊晶 epitaxial graphene on silicon carbide substrate
2" 3" 4" 6"
Electronics-Applications for SiC
Carbide is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV
range of the spectrum. SiC is the material of choice because it offers low
lattice mismatch for III-nitride epitaxial layers and high thermal conductivity
(important for lasers).
Blue LEDs on SiC-basis have been commercially
available for several years now. The next important step will be the development
of blue SiC-laser-diodes, which can be used to increase data storage capacity
among many other applications. The use of SiC-based UV- diodes may also find
various applications, i.e. monitoring of combustion processes, all sorts of
UV-detection while detector is almost solar-blind.
Electronics based on SiC
shows advantages compared to Si-devices, where environmental conditions are
adverse, i.e. ionizing radiation, heat-aggressive chemicals. For instance,
SiC-based electronics would help to reduce weight and therefore costs of
spacecraft, since SiC-devices showed to be much more resistant to ionizing
radiation than Si-devices. Thus, a reduction of radiation-shielding is possible.
Further, they may reduce or eliminate the use of cooling systems that have to be
implemented as soon as Si-electronics is used.
Application and Benefits of Devices
Processed on SiC
Because of its outstanding
material properties, SiC-based electronics and devices can work in very hostile
environment, where operation of conventional silicon-based electronics is not
possible anymore. Silicon carbide's ability to work under high temperature, high
power and high radiation conditions enable large enhancements of
device-performance in a wide variety of applications.
Typical areas that
already take or will take profit from SiC-devices are:
all sorts of UV-detection while
detector is almost solar blind
to conventional techniques SiC-based sensors offer:
complex electronics and sensor systems to enhance their capabilities, i.e. for
monitoring important parts of the engines that operate at high temperatures.
Today's silicon-based devices cannot operate at elevated temperatures, and
therefore must be shielded and kept away from hot areas. With that comes the
necessity to use long wires and cable-connectors to connect electronics with the
sensors. However, wiring and connector failure are crucial points that determine
maintenance cycles of the engines and downtime of commercial aircraft.
High temperature silicon carbide electronics and sensors that make
uncooled operation at temperatures up to 600 Ã‚Â°C possible, would result in
substantial aircraft performance gains due to weight savings and increased
SiC-based control electronics would eliminate most of the
wiring and connectors needed in conventional protected aircaft control systems.
This is also important for surveillance of the engines at spacecraft launching
Applications for SiC
to conventional Si-devices SiC-based electronics offers:
results from SiCÃ‚Â´s properties, namely:
Power electronics based on SiC may
save billions of Euros due to an increase of efficiency of the electric power
distribution system. According to estimations power plants generate an excess
power reserve of around 20 % of consumed electricity to make sure that load
changes or component failures do not affect service. Use of power devices makes
a smart management of ressources possible and would drive down the generated
power reserve to a minimum. Forecasts say that a reduction of power reserve of 5
% may result in savings of 50 billion US$ in the USalone over 25
Applications of SiC
to conventional techniques SiC-based devices offer:
Most promising applications of
SiC-based microwave electronics are wireless communications and radar, since
conventional GaAs-based devices cannot operate at power densities and high
temperatures that are demanded i.e. for defence purposes for radar. The same
properties allow wireless communication to benefit from SiC. For instance, SiC
RF-transistors operate at power densities beyond the theoretical limit of
GaAs-based transistors. SiC RF-devices may be used in cellphone base
SiCrystal offers silicon
carbide wafers of polytype 4H and 6H in different quality grades.
Standard quality wafers
meet high demands for production-scale purposes, engineering grade substrates
for research and development and for process trials.
You may check out the
specifications of our
Physical and Electronic Properties of SiC*
c = 1.0053 nm
c = 1.5117 nm
1 cubic (k)
2 cubic (k1,k2)
= 467 nm
no = 2.719
ne = 2.777
no = 2.707
ne = 2.755
2 - 4
Saturation Drift Velocity
* data as
reported e.g. in Landolt-Boernstein (Springer Verlag) and G.L. Harris